BAND STRUCTURE OF SILICON, GERMANIUM, AND RELATED SEMICONDUCTORS

[1] INTRINSIC OPTICAL ABSORPTION IN GERMANIUM-SILICON ALLOYS [J]. PHYSICAL REVIEW, 1958, 109 (03): : 695 - 710

[2] EFFECT OF TEMPERATURE AND DOPING ON REFLECTIVITY OF GERMANIUM IN FUNDAMENTAL ABSORPTION REGION [J]. PHYSICAL REVIEW, 1961, 122 (05): : 1382 - &

[3] FUNDAMENTAL REFLECTIVITY SPECTRUM OF SEMICONDUCTORS WITH ZINC-BLENDE STRUCTURE [J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 : 2151 - &

[4] CANCELLATION OF KINETIC AND POTENTIAL ENERGY IN ATOMS, MOLECULES, AND SOLIDS [J]. PHYSICAL REVIEW, 1961, 122 (06): : 1821 - &

[5] CYCLOTRON RESONANCE OF ELECTRONS AND HOLES IN SILICON AND GERMANIUM CRYSTALS [J]. PHYSICAL REVIEW, 1955, 98 (02): : 368 - 384

[6] DRESSELHAUS GF, 1955, THESIS U CALIFORNIA

[7] BAND STRUCTURE AND TRANSPORT PROPERTIES OF SOME 3-5 COMPOUNDS [J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 : 2155 - &

[8] ELLIOT RJ, 1957, PHYS REV, V108, P1383

[9] FEHER G, 1960, PHYS REV LETT, V5, P307

[10] HENSEL JC, PRIVATE COMMUNICATIO

[1] INTRINSIC OPTICAL ABSORPTION IN GERMANIUM-SILICON ALLOYS [J]. PHYSICAL REVIEW, 1958, 109 (03): : 695 - 710

[2] EFFECT OF TEMPERATURE AND DOPING ON REFLECTIVITY OF GERMANIUM IN FUNDAMENTAL ABSORPTION REGION [J]. PHYSICAL REVIEW, 1961, 122 (05): : 1382 - &

[3] FUNDAMENTAL REFLECTIVITY SPECTRUM OF SEMICONDUCTORS WITH ZINC-BLENDE STRUCTURE [J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 : 2151 - &

[4] CANCELLATION OF KINETIC AND POTENTIAL ENERGY IN ATOMS, MOLECULES, AND SOLIDS [J]. PHYSICAL REVIEW, 1961, 122 (06): : 1821 - &

[5] CYCLOTRON RESONANCE OF ELECTRONS AND HOLES IN SILICON AND GERMANIUM CRYSTALS [J]. PHYSICAL REVIEW, 1955, 98 (02): : 368 - 384

[6] DRESSELHAUS GF, 1955, THESIS U CALIFORNIA

[7] BAND STRUCTURE AND TRANSPORT PROPERTIES OF SOME 3-5 COMPOUNDS [J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 : 2155 - &

[8] ELLIOT RJ, 1957, PHYS REV, V108, P1383

[9] FEHER G, 1960, PHYS REV LETT, V5, P307

[10] HENSEL JC, PRIVATE COMMUNICATIO