THE PREPARATION OF VERY FLAT SURFACES OF SILICON BY ELECTROPOLISHING

被引:14
作者
BAKER, D
TILLMAN, JR
机构
关键词
D O I
10.1016/0038-1101(63)90054-6
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:589 / &
相关论文
共 5 条
[1]  
Holmes P.J., 1962, ELECTROCHEMISTRY SEM, P329
[2]   CONTROLLED ETCHING OF SILICON IN THE HF-HNO3 SYSTEM [J].
KLEIN, DL ;
DSTEFAN, DJ .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (01) :37-42
[3]  
PASHLEY DW, 1956, ADV PHYS, V5, P179
[4]   AN ELECTROPOLISHING TECHNIQUE FOR GERMANIUM AND SILICON [J].
SULLIVAN, MV ;
KLEIN, DL ;
FINNE, RM ;
POMPLIANO, LA ;
KOLB, GA .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (05) :412-419
[5]  
Turner D. R., 1962, ELECTROCHEMISTRY SEM, P155