ACCURATE MOLECULAR-BEAM EPITAXIAL-GROWTH OF VERTICAL-CAVITY SURFACE-EMITTING LASER USING DIODE-LASER REFLECTOMETRY

被引：8

作者：

LI, GS

YUEN, W

TOH, K

ENG, LE

LIM, SF

CHANGHASNAIN, CJ

机构：

[1] E. L. Ginzton Laboratory, Stanford University, Stanford

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1995年 / 7卷 / 09期

关键词：

D O I：

10.1109/68.414672

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Accurate and reproducible molecular beam epitaxial (MBE) growths of vertical cavity surface-emitting lasers (VCSEL's) and various vertical-cavity structures are achieved using an extremely simple, cost-effective and compact diode laser reflectometry pre-growth calibration system, Average growth accuracy of 0.25% with a 0.40% standard deviation is obtained over a period of 6 months for a variety of growth structures, Low threshold continuous wave room temperature operation is achieved from all the VCSEL wafers.

引用

页码：971 / 973

页数：3