THIN-FILM ORGANIC CHANNEL FIELD-EFFECT TRANSISTOR

被引：11

作者：

AGUILHON, L ^{[1
]}

BOURGOIN, JP ^{[1
]}

BARRAUD, A ^{[1
]}

HESTO, P ^{[1
]}

机构：

[1] CTR ETUD ATOM, SERV CHIM MOLEC, F-91191 GIF SUR YVETTE, FRANCE

来源：

SYNTHETIC METALS | 1995年 / 71卷 / 1-3期

关键词：

D O I：

10.1016/0379-6779(94)03130-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Accumulation Field effect transistors based on undoped, conducting Langmuir-Blodgett films have been successfully made. They exhibit reasonably high field induced drain current modulation. In the voltage range explored, the onset of drain current saturation is observed. A model accounting for the electrical behaviour of these FET's is presented, which gives access to several material characteristics impossible to obtain by direct measurements on the conducting LB films.

引用

页码：1971 / 1974

页数：4

共 5 条

[1]

BARRAUD A, 1991, NATO ADV SCI I B-PHY, V253, P771

[2]

BOURGOIN JP, 1991, THESIS PARIS 11 U

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[4] EFFECT OF SURFACE TRAPS ON CHARACTERISTICS OF INSULATED-GATE FIELD-EFFECT TRANSISTORS [J].

OREILLY, TJ .

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[5] MOLECULAR FIELD-EFFECT TRANSISTORS USING CONDUCTING POLYMER LANGMUIR-BLODGETT-FILMS [J].

PALOHEIMO, J ;

KUIVALAINEN, P ;

STUBB, H ;

VUORIMAA, E ;

YLILAHTI, P .

APPLIED PHYSICS LETTERS, 1990, 56 (12) :1157-1159

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