PREPARATION OF TE FILMS BY HOT WALL EPITAXY

被引：12

作者：

ATHWAL, IS

BEDI, RK

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1987年 / 26卷 / 09期

关键词：

D O I：

10.1143/JJAP.26.1413

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1413 / 1415

页数：3

共 10 条

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CAPERS, MJ ;

WHITE, M .

THIN SOLID FILMS, 1973, 15 (01) :5-14

[2]

CHAUDHURI AK, 1975, INDIAN J PHYS, V49, P783

[3]

DEOKAR VD, 1966, BASIC PROBLEMS THIN, P653

[4] STRUCTURAL DEPENDENCE OF ELECTRICAL-CONDUCTIVITY OF THIN TELLURIUM-FILMS [J].

DINNO, MA ;

SCHWARTZ, M ;

GIAMMARA, B .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (08) :3328-3331

[5] EPITAXIAL-GROWTH OF CADMIUM FILMS BY THE HOT-WALL TECHNIQUE [J].

KULKARNI, AV ;

BOSE, S ;

PRATAP, R .

THIN SOLID FILMS, 1984, 120 (01) :L73-L77

[6]

OTERO AL, 1978, THIN SOLID FILMS, V49, P1

[7]

PAHLE AM, 1964, THIN SOLID FILMS, V41, P235

[8] P-TYPE TELLURIUM THIN-FILM TRANSISTOR [J].

WEIMER, PK .

PROCEEDINGS OF THE IEEE, 1964, 52 (05) :608-&

[9]

WEIMER PK, 1968, P IEEE, V57, P1479

[10] TELLURIUM TFTS EXCEED 100-MHZ AND 1-WATT CAPABILITIES [J].

WILSON, HL ;

GUTIERREZ, WA .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (03) :415-+

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