PHOTOEFFECTS IN NONUNIFORMLY IRRADIATED P-N JUNCTIONS

[1] ANOMALOUS ELECTRICAL PROPERTIES OF PARA-TYPE INDIUM ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (09) : 1412 - 1416

[2] LUCOVSKY G, 1959, P IRIS, V4, P221

[3] Morse P M, 1953, METHODS THEORETICA 2

[4] RITTNER ES, 1956, 1954 PHOT C

[5] NARROW BASE GERMANIUM PHOTODIODES [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (06): : 1122 - 1130

[6] SCHOCKLEY W, 1950, ELECTRONS HOLES SEMI

[7] VANDERZIEL A, 1957, SOLID STATE PHYSICAL

[8] A NEW SEMICONDUCTOR PHOTOCELL USING LATERAL PHOTOEFFECT [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (04): : 474 - 483

[9] WOLFENDALE E, 1958, JUNCTION TRANSISTOR

[1] ANOMALOUS ELECTRICAL PROPERTIES OF PARA-TYPE INDIUM ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (09) : 1412 - 1416

[2] LUCOVSKY G, 1959, P IRIS, V4, P221

[3] Morse P M, 1953, METHODS THEORETICA 2

[4] RITTNER ES, 1956, 1954 PHOT C

[5] NARROW BASE GERMANIUM PHOTODIODES [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (06): : 1122 - 1130

[6] SCHOCKLEY W, 1950, ELECTRONS HOLES SEMI

[7] VANDERZIEL A, 1957, SOLID STATE PHYSICAL

[8] A NEW SEMICONDUCTOR PHOTOCELL USING LATERAL PHOTOEFFECT [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (04): : 474 - 483

[9] WOLFENDALE E, 1958, JUNCTION TRANSISTOR