LPE GROWTH AND PHOTO-LUMINESCENCE OF IN1-XGAXP1-YASY ON GAAS

被引：6

作者：

SUZUKI, A

KYURAGI, H

MATSUMURA, S

MATSUNAMI, H

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1981年 / 20卷 / 01期

关键词：

D O I：

10.7567/JJAPS.20S1.211

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：211 / 214

页数：4

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[9] LIMITATIONS OF DIRECT-INDIRECT TRANSITION ON IN1-XGAXP1-ZASZ HETEROJUNCTIONS [J].

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[10] DEGRADATION MECHANISMS OF GA1-XALX AS VISIBLE DIODE-LASERS [J].

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