YELLOW-GREEN IN1-XGAXP AND IN1-XGAXP1-ZASZ LEDS AND ELECTRON-BEAM-PUMPED LASERS PREPARED BY LPE AND VPE

被引：34

作者：

ERMAKOV, ON ^{[1
]}

GARBA, LS ^{[1
]}

GOLOVANOV, YA ^{[1
]}

SUSHKOV, VP ^{[1
]}

CHUKICHEV, MV ^{[1
]}

机构：

[1] MV LOMONOSOV STATE UNIV,MOSCOW 117234,USSR

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1979年 / 26卷 / 08期

关键词：

D O I：

10.1109/T-ED.1979.19575

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In1-x,GAxPx (x = 0.6-0.7) and In1-xGaxAszP1-z (x = 0.7-0.8 and z = 0-0.2) epitaxial structures for visible LED's and electron-beam-pumped lasers have been fabricated both by vapor-phase epitaxy (VPE) and by liquid-phase epitaxy (LPE). The crystal perfection and luminescent properties of layers grown on (111)B- and (100)-oriented GaP and GaAs1-y,Py(y = 0.3-04) substrates have been investigated. Yellow-green diffused LED's (λ = 5850 A at room temperature) have brightness as high as 5000 cd/m2 at the de current density of 10 A/cm2. Lasing under electron-beam excitation at wavelengths as short as 5530 A (T = 77 K) has been obtained. Copyright © 1979 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：1190 / 1193

页数：4

共 14 条

[1]

Alferov Zh. I., 1975, Pis'ma v Zhurnal Tekhnicheskoi Fizika, V1, P406

[2]

ALFEROV ZI, 1976, PISMA ZH TEKH FIZ, P481

[3] RADIATIVE PROCESSES IN DIRECT AND INDIRECT BAND GAP IN1-XGAXP [J].