SECONDARY-ION EMISSION FROM SILICON BOMBARDED WITH ATOMIC AND MOLECULAR NOBLE-GAS IONS

被引：53

作者：

WITTMAACK, K ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

SURFACE SCIENCE | 1979年 / 90卷 / 02期

关键词：

D O I：

10.1016/0039-6028(79)90360-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The emission of Si+ from a clean silicon surface has been studied for bombardment with various atomic and molecular noble gas ions at energies between 1.5 and 30 keV. It was found that the degree of ionization of Si+ depends strongly (l̃inearly) on the projectile energy but only weakly on the projectile mass. These results suggest that the degree of ionization is heavily affected by the (dynamic) perturbation of the bulk properties of the bombarded area which increases with increasing nuclear energy deposition. © 1979.

引用

页码：557 / 563

页数：7