FABRICATION OF A GATED GALLIUM-ARSENIDE HETEROSTRUCTURE RESONANT TUNNELING DIODE

被引：20

作者：

KINARD, WB ^{[1
]}

WEICHOLD, MH ^{[1
]}

KIRK, WP ^{[1
]}

机构：

[1] TEXAS A&M UNIV SYST,DEPT PHYS,COLLEGE STN,TX 77843

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 03期

关键词：

D O I：

10.1116/1.585032

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：393 / 396

页数：4

相关论文

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