DISSIPATIVE QUANTUM TUNNELING OF A SINGLE DEFECT IN BI

被引：31

作者：

CHUN, KJ ^{[1
]}

BIRGE, NO ^{[1
]}

机构：

[1] MICHIGAN STATE UNIV,CTR FUNDAMENTAL MAT RES,E LANSING,MI 48824

来源：

PHYSICAL REVIEW B | 1993年 / 48卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.48.11500

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have studied the dynamics of single bistable defects in submicrometer Bi wires at temperatures 0.1-2 K. The defect motions cause measurable changes in the sample resistance via universal conductance fluctuations. The temperature dependence of the transition rates agrees quantitatively with the predictions of dissipative quantum tunneling theory, which describes tunneling of a defect in a double-well potential with strong dissipation from the electron bath. We report detailed measurements of a single defect as a function of magnetic field, and discuss the field dependence of the defect-potential asymmetry epsilon, the defect-bath coupling constant alpha, and the renormalized tunneling matrix element DELTA(r).

引用

页码：11500 / 11503

页数：4

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