CURRENT-VOLTAGE CHARACTERISTICS OF AMORPHOUS AS2TE3 MONOCRYSTALLINE GAAS HETEROJUNCTIONS

被引：4

作者：

DAM, T ^{[1
]}

STOURAC, L ^{[1
]}

机构：

[1] CZECHUSLOVAK ACAD SCI,INST SOLID STATE PHYSI,CS-16253 PRAHA 6,CZECHOSLOVAKIA

来源：

关键词：

D O I：

10.1007/BF01588772

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1409 / 1412

页数：4

共 7 条

[1]

Brodsky M. H., 1975, Critical Reviews in Solid State Sciences, V5, P591, DOI 10.1080/10408437508243516

[2] TRANSPORT PROPERTIES OF GLASS-SILICON HETEROJUNCTIONS [J].

DUNN, B ;

MACKENZIE, JD .

KOCKA, J .

[4]

KOCKA J, 1974, THESIS PRAGUE

[5] PHOTOELECTRIC PHENOMENA IN AMORPHOUS CHALCOGENIDE SEMICONDUCTORS [J].

KOLOMIETS, BT ;

LYUBIN, VM .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1973, 17 (01) :11-46

MARSHALL, JM ;

OWEN, AE .

PHILOSOPHICAL MAGAZINE, 1975, 31 (06) :1341-1356

[7]

STOURAC L, 1976, 6TH P INT C AM LIQ S, P44