HIGH-SPEED GAINASP-INP BURIED-HETEROSTRUCTURE OPTICAL-INTENSITY MODULATOR WITH SEMIINSULATING INP BURYING LAYERS

被引：21

作者：

SODA, H

NAKAI, K

ISHIKAWA, H

IMAI, H

机构：

[1] Fujitsu Lab Ltd, Atsugi, Jpn, Fujitsu Lab Ltd, Atsugi, Jpn

来源：

ELECTRONICS LETTERS | 1987年 / 23卷 / 23期

关键词：

LIGHT - Modulation - SEMICONDUCTING GALLIUM COMPOUNDS;

D O I：

10.1049/el:19870858

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaInAsP/InP buried-heterostructure (BH) optical intensity modulators have been fabricated by the use of Fe-doped semi-insulating InP burying layers. The reduction of a parasitic capacitance due to the semi-insulating burying layers realised a wide modulation bandwidth of 11 multiplied by (times) 2 GHz. At a wavelength of 1 multiplied by (times) 53 mu m, an attenuation ratio of 20 db at 26 degree C was achieved with an applied voltage of minus 8 multiplied by (times) 5 v.

引用

页码：1232 / 1234

页数：3