ELECTROABSORPTION IN INGAASP-INP DOUBLE HETEROSTRUCTURES

[1] ELECTRIC-FIELD-INDUCED INFRARED ABSORPTION IN GAAS P-N JUNCTIONS [J]. APPLIED PHYSICS LETTERS, 1966, 9 (11) : 389 - &

[2] FRANZ W, 1958, Z NATURFORSCH PT A, V13, P484

[3] SINGLE-MODE CW RIDGE-WAVEGUIDE LASER EMITTING AT 1.55 MU-M [J]. ELECTRONICS LETTERS, 1979, 15 (23) : 763 - 765

[4] Keldysh L. V., 1958, SOV PHYS JETP, V34, P788

[5] KELDYSH LV, 1970, SOV PHYS SEMICOND+, V3, P876

[6] LOGAN RA, 1982, ELECTRON LETT, V18, P722

[7] DYNAMIC LINEWIDTH OF AMPLITUDE-MODULATED SINGLE-LONGITUDINAL-MODE SEMICONDUCTOR-LASERS OPERATING AT 1.5 MU-M WAVELENGTH [J]. ELECTRONICS LETTERS, 1984, 20 (03) : 121 - 122

[8] ELECTROABSORPTION IN ALYGA1-YAS-ALXGA1-XAS DOUBLE HETEROSTRUCTURES [J]. APPLIED PHYSICS LETTERS, 1973, 22 (08) : 372 - 374

[9] Wood T. H., 1983, International Electron Devices Meeting 1983. Technical Digest, P486

[1] ELECTRIC-FIELD-INDUCED INFRARED ABSORPTION IN GAAS P-N JUNCTIONS [J]. APPLIED PHYSICS LETTERS, 1966, 9 (11) : 389 - &

[2] FRANZ W, 1958, Z NATURFORSCH PT A, V13, P484

[3] SINGLE-MODE CW RIDGE-WAVEGUIDE LASER EMITTING AT 1.55 MU-M [J]. ELECTRONICS LETTERS, 1979, 15 (23) : 763 - 765

[4] Keldysh L. V., 1958, SOV PHYS JETP, V34, P788

[5] KELDYSH LV, 1970, SOV PHYS SEMICOND+, V3, P876

[6] LOGAN RA, 1982, ELECTRON LETT, V18, P722

[7] DYNAMIC LINEWIDTH OF AMPLITUDE-MODULATED SINGLE-LONGITUDINAL-MODE SEMICONDUCTOR-LASERS OPERATING AT 1.5 MU-M WAVELENGTH [J]. ELECTRONICS LETTERS, 1984, 20 (03) : 121 - 122

[8] ELECTROABSORPTION IN ALYGA1-YAS-ALXGA1-XAS DOUBLE HETEROSTRUCTURES [J]. APPLIED PHYSICS LETTERS, 1973, 22 (08) : 372 - 374

[9] Wood T. H., 1983, International Electron Devices Meeting 1983. Technical Digest, P486