HALL-MOBILITY ANISOTROPY IN GASE

被引：67

作者：

AUGELLI, V ^{[1
]}

MANFREDOTTI, C ^{[1
]}

MURRI, R ^{[1
]}

VASANELLI, L ^{[1
]}

机构：

[1] CNR, GRUPPO NAZL STRUTTURA MAT, BARI, ITALY

来源：

关键词：

D O I：

10.1103/PhysRevB.17.3221

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3221 / 3226

页数：6

共 16 条

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[J]. JOURNAL OF CRYSTAL GROWTH, 1972, 16 (02) : 183 - &
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[7] ISMAILOV FI, 1966, PHYS STATUS SOLIDI, V17, pK237
[8] LECOMBER PG, 1973, ELECTRONIC STRUCTURA, P369
[9] ELECTRICAL-PROPERTIES OF P-TYPE GASE
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[10] INFLUENCE OF STACKING DISORDER ON ELECTRONIC PROPERTIES OF LAYERED SEMICONDUCTORS
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