LOCALIZED VIBRATIONAL MODES IN ELECTRON-IRRADIATED GAAS - SI

被引：25

作者：

SPITZER, WG

KAHAN, A

BOUTHILLETTE, L

机构：

[1] Departments of Electrical Engineering and Materials Science, University of Southern California, Los Angeles

[2] Air Force Cambridge Research Laboratories (OAR), Bedford

来源：

JOURNAL OF APPLIED PHYSICS | 1969年 / 40卷 / 08期

关键词：

D O I：

10.1063/1.1658198

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

[No abstract available]

引用

页码：3398 / +

页数：1

共 9 条

[1]

ALLRED W, 1968, 2 P INT C GAAS

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GOODWIN, AR ;

SMITH, SD .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1965, 287 (1408) :64-&

[3]

AUKERMAN LW, 1968, SEMICONDUCT SEMIMET, V4, P343

[4] LOCAL MODE SPECTRA OF LI COMPLEXES IN GAAS [J].

LEVY, M ;

LORIMOR, O ;

SPITZER, WG .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (03) :1914-&

[5] LOCAL MODE ABSORPTION OF A1 AND P IN GAAS [J].

LORIMOR, OG ;

SPITZER, WG .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (06) :2509-&

[6] LOCAL MODE ABSORPTION IN COMPENSATED SILICON-DOPED GALLIUM ARSENIDE [J].

LORIMOR, OG ;

SPITZER, WG .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (10) :3687-+

[7]

NEWMAN RC, 1968, LOCALIZED EXCITATION, P177

[8] LOCAL-MODE ABSORPTION AND DEFECTS IN COMPENSATED SILICON-DOPED GALLIUM ARSENIDE [J].

SPITZER, WG ;

ALLRED, W .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (11) :4999-&

[9] SITE TRANSFER OF SI IN GAAS [J].

SPITZER, WG ;

ALLRED, W .

APPLIED PHYSICS LETTERS, 1968, 12 (01) :5-&

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