MONTE-CARLO SIMULATIONS OF MOLECULAR-BEAM EPITAXY ON SI(001) SURFACES

[11] BISWAS R, 1985, MAT RES SOC S P, V63, P173

[12] COHEN P, COMMUNICATION

[13] MONTE-CARLO SIMULATIONS OF MBE GROWTH OF III-V SEMICONDUCTORS - THE GROWTH-KINETICS, MECHANISM, AND CONSEQUENCES FOR THE DYNAMICS OF RHEED INTENSITY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 540 - 546

[14] ROLE OF SURFACE MOLECULAR REACTIONS IN INFLUENCING THE GROWTH-MECHANISM AND THE NATURE OF NONEQUILIBRIUM SURFACES - A MONTE-CARLO STUDY OF MOLECULAR-BEAM EPITAXY [J]. PHYSICAL REVIEW LETTERS, 1986, 56 (10) : 1066 - 1069

[15] INSITU STUDY OF THE MOLECULAR-BEAM EPITAXY OF COSI2 ON (111) SI BY TRANSMISSION ELECTRON-MICROSCOPY AND DIFFRACTION [J]. APPLIED PHYSICS LETTERS, 1987, 51 (01) : 45 - 47

[16] DIRECT MEASUREMENTS OF THE SURFACE ENERGIES OF CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (12) : 2208 - 2218

[17] THE INFLUENCE OF RECONSTRUCTION ON EPITAXIAL-GROWTH - GE ON SI(100)-2X1) AND SI(111)-(7X7) [J]. SURFACE SCIENCE, 1985, 155 (2-3) : 413 - 431

[18] KASPI R, IN PRESS

[19] KAWAMURA T, 1986, SURF SCI, V171, pL409, DOI 10.1016/0039-6028(86)90552-2

[20] DIFFRACTION FROM STEPPED SURFACES .1. REVERSIBLE SURFACES [J]. SURFACE SCIENCE, 1984, 139 (01) : 121 - 154

[11] BISWAS R, 1985, MAT RES SOC S P, V63, P173

[12] COHEN P, COMMUNICATION

[13] MONTE-CARLO SIMULATIONS OF MBE GROWTH OF III-V SEMICONDUCTORS - THE GROWTH-KINETICS, MECHANISM, AND CONSEQUENCES FOR THE DYNAMICS OF RHEED INTENSITY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 540 - 546

[14] ROLE OF SURFACE MOLECULAR REACTIONS IN INFLUENCING THE GROWTH-MECHANISM AND THE NATURE OF NONEQUILIBRIUM SURFACES - A MONTE-CARLO STUDY OF MOLECULAR-BEAM EPITAXY [J]. PHYSICAL REVIEW LETTERS, 1986, 56 (10) : 1066 - 1069

[15] INSITU STUDY OF THE MOLECULAR-BEAM EPITAXY OF COSI2 ON (111) SI BY TRANSMISSION ELECTRON-MICROSCOPY AND DIFFRACTION [J]. APPLIED PHYSICS LETTERS, 1987, 51 (01) : 45 - 47

[16] DIRECT MEASUREMENTS OF THE SURFACE ENERGIES OF CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (12) : 2208 - 2218

[17] THE INFLUENCE OF RECONSTRUCTION ON EPITAXIAL-GROWTH - GE ON SI(100)-2X1) AND SI(111)-(7X7) [J]. SURFACE SCIENCE, 1985, 155 (2-3) : 413 - 431

[18] KASPI R, IN PRESS

[19] KAWAMURA T, 1986, SURF SCI, V171, pL409, DOI 10.1016/0039-6028(86)90552-2

[20] DIFFRACTION FROM STEPPED SURFACES .1. REVERSIBLE SURFACES [J]. SURFACE SCIENCE, 1984, 139 (01) : 121 - 154