TRANSIENT HEAT FLOW FROM AN EPITAXIAL LAYER INTO SUBSTRATE

[1] ABRAMOWITZ M, 1965, HDB MATH FUNCTIONS, P297

[2] DESIGN OF GUNN DEVICES FOR CW OPERATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (09) : 615 - +

[3] RECENT RESULTS WITH EPITAXIAL GAAS GUNN EFFECT OSCILLATORS [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (10): : 1497 - +

[4] Carslaw H. S., 1959, CONDUCTION HEAT SOLI

[5] HEAT FLOW IN N++-N-N+ EPITAXIAL GAAS BULK EFFECT DEVICES [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (01): : 112 - &

[6] THERMAL CONDUCTIVITY OF SILICON GERMANIUM 3-5 COMPOUNDS AND 3-5 ALLOYS [J]. SOLID-STATE ELECTRONICS, 1967, 10 (03) : 161 - &

[7] MOSEKILDE E, TO BE PUBLISHED

[8] THERMAL CONDUCTIVITY OF MGO, AL2O3, MGAL2O4, AND FE3O4 CRYSTALS FROM 3 DEGREES TO 300 DEGREES K [J]. PHYSICAL REVIEW, 1962, 126 (02): : 427 - &

[1] ABRAMOWITZ M, 1965, HDB MATH FUNCTIONS, P297

[2] DESIGN OF GUNN DEVICES FOR CW OPERATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (09) : 615 - +

[3] RECENT RESULTS WITH EPITAXIAL GAAS GUNN EFFECT OSCILLATORS [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (10): : 1497 - +

[4] Carslaw H. S., 1959, CONDUCTION HEAT SOLI

[5] HEAT FLOW IN N++-N-N+ EPITAXIAL GAAS BULK EFFECT DEVICES [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (01): : 112 - &

[6] THERMAL CONDUCTIVITY OF SILICON GERMANIUM 3-5 COMPOUNDS AND 3-5 ALLOYS [J]. SOLID-STATE ELECTRONICS, 1967, 10 (03) : 161 - &

[7] MOSEKILDE E, TO BE PUBLISHED

[8] THERMAL CONDUCTIVITY OF MGO, AL2O3, MGAL2O4, AND FE3O4 CRYSTALS FROM 3 DEGREES TO 300 DEGREES K [J]. PHYSICAL REVIEW, 1962, 126 (02): : 427 - &