LOW-TEMPERATURE SCANNING-TUNNELING-MICROSCOPY STUDIES OF GRANULAR METAL-FILMS

被引：18

作者：

BARSADEH, E ^{[1
]}

GOLDSTEIN, Y ^{[1
]}

WOLOVELSKY, M ^{[1
]}

PORATH, D ^{[1
]}

ZHANG, C ^{[1
]}

DENG, H ^{[1
]}

ABELES, B ^{[1
]}

MILLO, O ^{[1
]}

机构：

[1] EXXON RES & ENGN CO, ANNANDALE, NJ 08801 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1995年 / 13卷 / 03期

关键词：

Aluminum compounds - Current voltage characteristics - Electron tunneling - Gold - Granular materials - Low temperature phenomena - Metals - Nanostructured materials - Percolation (solid state) - Thin films - Transport properties - Tunnel junctions;

D O I：

10.1116/1.587907

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Cryogenic scanning tunneling microscopy is used to study local electrical transport properties of thin granular Au/Al2O3 films in the vicinity of the percolation threshold. The current-voltage characteristics are found to vary dramatically from one tip position to another over distances of the order of a few nanometers. The characteristics often exhibit single electron tunneling effects such as the Coulomb blockade and the Coulomb staircase. This behavior is similar to that observed for tunneling into a single isolated nanometer size metallic particle which was explained in terms of a double-barrier tunnel junction model. Some of the characteristics show, however, novel Coulomb-staircase structures having unusual variations in step widths and heights due to complex tunneling paths. A triple-barrier tunnel junction model, where the electron tunnels through two metallic particles along its path, accounts quantitatively for the experimental results.

引用

页码：1084 / 1088

页数：5

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