SINGLE-ELECTRON TUNNELING EFFECTS IN GRANULAR METAL-FILMS

被引：76

作者：

BARSADEH, E ^{[1
]}

GOLDSTEIN, Y ^{[1
]}

ZHANG, C ^{[1
]}

DENG, H ^{[1
]}

ABELES, B ^{[1
]}

MILLO, O ^{[1
]}

机构：

[1] EXXON RES & ENGN CO, ANNANDALE, NJ 08801 USA

来源：

PHYSICAL REVIEW B | 1994年 / 50卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.50.8961

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Cryogenic scanning tunneling microscopy is used to study local electrical-transport properties of thin granular Au/Al2O3 films in the vicinity of the percolation threshold. The current-voltage characteristics are found to vary dramatically from one tip position to another over distances of the order of a few nanometers. These characteristics often exhibit interesting Coulomb-staircase structures having unusual variations in step widths and heights due to complex tunneling paths. A triple-barrier tunnel-junction model accounts quantitatively for the experimental results.

引用

页码：8961 / 8964

页数：4

共 12 条

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