LOW-TEMPERATURE RADIATION-DAMAGE IN SILICON .1. ANNEALING STUDIES ON N-TYPE MATERIAL

The presence of electrically active defects in electron irradiated P-doped n-type silicon was monitored using capacitance and loss factor measurements. Irradiations were performed at temperatures APP 1STH 12 K with electrons of energies APP 1STH 1. 50 MeV. Seemingly, the concentration of single vacancies on the irradiated samples is low. This is deduced from the small recovery in the samples properties observed upon annealing at approximately 75 K. Also two annealing stages observed at approximately 140-150 K and approximately 240 K are attributed to the self-interstitial. Electron traps observed at approximately (E//c - 0. 14) eV and (E//c - 0. 24)eV in the gap are ascribed to the carbon interstitial and to the divacancy, respectively.