ELECTRON-IRRADIATION-INDUCED DIVACANCY IN LIGHTLY DOPED SILICON

[1] PARAMAGNETIC RESONANCE IN ELECTRON IRRADIATED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) : 1195 - 1198

[2] EFFECT OF ELECTRON ENERGY ON DEFECT INTRODUCTION IN SILICON [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (6-7) : 913 - &

[3] 1.8- 3.3- AND 3.9-MU BANDS IN IRRADIATED SILICON - CORRELATIONS WITH DIVACANCY [J]. PHYSICAL REVIEW, 1966, 152 (02): : 761 - +

[4] PHOTOCONDUCTIVITY STUDIES OF DEFECTS IN P-TYPE SILICON - BORON INTERSTITIAL AND ALUMINUM INTERSTITIAL DEFECTS [J]. PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (02): : 647 - &

[5] Corbett J. W., 1966, ELECT RAD DAMAGE SEM, P39

[6] PRODUCTION OF DIVACANCIES AND VACANCIES BY ELECTRON IRRADIATION OF SILICON [J]. PHYSICAL REVIEW, 1965, 138 (2A): : A555 - &

[7] ELECTRICAL-PROPERTIES OF PLATINUM IN SILICON AS DETERMINED BY DEEP-LEVEL TRANSIENT SPECTROSCOPY [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (07) : 3172 - 3176

[8] INFRARED ABSORPTION AND PHOTOCONDUCTIVITY IN IRRADIATED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) : 1127 - 1134

[9] RECOMBINATION IN GAMMA-IRRADIATED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (07) : 2197 - &

[10] ELECTRON BOMBARDMENT OF SILICON [J]. PHYSICAL REVIEW, 1959, 114 (06): : 1414 - 1420

[1] PARAMAGNETIC RESONANCE IN ELECTRON IRRADIATED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) : 1195 - 1198

[2] EFFECT OF ELECTRON ENERGY ON DEFECT INTRODUCTION IN SILICON [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (6-7) : 913 - &

[3] 1.8- 3.3- AND 3.9-MU BANDS IN IRRADIATED SILICON - CORRELATIONS WITH DIVACANCY [J]. PHYSICAL REVIEW, 1966, 152 (02): : 761 - +

[4] PHOTOCONDUCTIVITY STUDIES OF DEFECTS IN P-TYPE SILICON - BORON INTERSTITIAL AND ALUMINUM INTERSTITIAL DEFECTS [J]. PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (02): : 647 - &

[5] Corbett J. W., 1966, ELECT RAD DAMAGE SEM, P39

[6] PRODUCTION OF DIVACANCIES AND VACANCIES BY ELECTRON IRRADIATION OF SILICON [J]. PHYSICAL REVIEW, 1965, 138 (2A): : A555 - &

[7] ELECTRICAL-PROPERTIES OF PLATINUM IN SILICON AS DETERMINED BY DEEP-LEVEL TRANSIENT SPECTROSCOPY [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (07) : 3172 - 3176

[8] INFRARED ABSORPTION AND PHOTOCONDUCTIVITY IN IRRADIATED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) : 1127 - 1134

[9] RECOMBINATION IN GAMMA-IRRADIATED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (07) : 2197 - &

[10] ELECTRON BOMBARDMENT OF SILICON [J]. PHYSICAL REVIEW, 1959, 114 (06): : 1414 - 1420