共 17 条
- [1] RECOMBINATION AND TRAPPING IN NORMAL AND ELECTRON-IRRADIATED SILICON [J]. PHYSICAL REVIEW, 1963, 129 (03): : 1174 - &
- [2] ANNEALING OF ELECTRON BOMBARDMENT DAMAGE IN SILICON CRYSTALS [J]. PHYSICAL REVIEW, 1957, 108 (03): : 645 - 648
- [4] CARTER JR, 1964, IEEE T NUCLEAR SCI, VNS11, P290
- [5] DEFECTS IN IRRADIATED SILICON .2. INFRARED ABSSORPTION OF SI-A CENTER [J]. PHYSICAL REVIEW, 1961, 121 (04): : 1015 - &
- [6] DOWNING RG, 1964, 4 P PHOT SPEC C, V1, pA51
- [7] GALKIN GN, 1961, SOV PHYS-SOL STATE, V2, P1819