ELECTRICAL-PROPERTIES OF PLATINUM IN SILICON AS DETERMINED BY DEEP-LEVEL TRANSIENT SPECTROSCOPY

被引：51

作者：

EVWARAYE, AO

SUN, E

机构：

[1] GE,CORP RES & DEV,SCHENECTADY,NY 12301

[2] GE,DEPT SEMICONDUCT PROD,AUBURN,NY 13201

来源：

关键词：

D O I：

10.1063/1.323112

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3172 / 3176

页数：5

共 15 条

[1] ELECTRICAL PROPERTIES OF SILICON DOPED WITH PLATINUM [J].

CARCHANO, H ;

JUND, C .

[2]

CHARLOT JJ, 1971, CR ACAD SCI B PHYS, V273, P1027

[3]

CHARLOT JJ, 1970, CR ACAD SCI B PHYS, V270, P1488

[4]

Conti M., 1971, Alta Frequenza, V40, P544

[5]

GLINCHUK KD, 1965, FIZ TVERD TELA+, V6, P2963

[6]

HENRY CH, TO BE PUBLISHED

[7]

HENRY CH, 1974, 12TH P INT C PHYS SE, P411

LANG, DV .

LANG, DV .

[10] PLATINUM AS A LIFETIME-CONTROL DEEP IMPURITY IN SILICON [J].

LISIAK, KP ;

MILNES, AG .