ELECTRICAL PROPERTIES OF SILICON DOPED WITH PLATINUM

被引：44

作者：

CARCHANO, H

JUND, C

机构：

来源：

关键词：

D O I：

10.1016/0038-1101(70)90012-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：83 / &

共 9 条

[1] CARLSON RE, UNPUBLISHED
[2] ELECTRICAL PROPERTIES OF N-TYPE GERMANIUM
DEBYE, PP
CONWELL, EM
[J]. PHYSICAL REVIEW, 1954, 93 (04): : 693 - 706
[3] GLINCHUK KD, 1965, FIZ TVERD TELA+, V6, P2963
[4] DRIFT AND CONDUCTIVITY MOBILITY IN SILICON
LUDWIG, GW
WATTERS, RL
[J]. PHYSICAL REVIEW, 1956, 101 (06): : 1699 - 1701
[5] STATISTICS OF THE CHARGE DISTRIBUTION FOR A LOCALIZED FLAW IN A SEMICONDUCTOR
SHOCKLEY, W
LAST, JT
[J]. PHYSICAL REVIEW, 1957, 107 (02): : 392 - 396
[6] Van der Pauw L. J., 1958, PHILIPS RES REP, V12, P1
[7] SPIN RESONANCE OF PD AND PT IN SILICON
WOODBURY, HH
LUDWIG, GW
[J]. PHYSICAL REVIEW, 1962, 126 (02): : 466 - &
[8] ZIBUTS YA, 1967, FIZ TVERD TELA+, V8, P2041
[9] ZIBUTS YA, 1964, SOV PHYS-SOL STATE, V5, P2416