SHORT-CHANNEL EFFECTS IN SUBQUARTER-MICROMETER-GATE HEMTS - SIMULATION AND EXPERIMENT

被引：132

作者：

AWANO, Y

KOSUGI, M

KOSEMURA, K

MIMURA, T

ABE, M

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 10期

关键词：

D O I：

10.1109/16.40908

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2260 / 2266

页数：7

共 21 条

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AWANO, Y .

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[2] PERFORMANCE OF A QUARTER-MICROMETER-GATE BALLISTIC ELECTRON HEMT [J].

AWANO, Y ;

KOSUGI, M ;

MIMURA, T ;

ABE, M .

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[3]

Awano Y., 1983, International Electron Devices Meeting 1983. Technical Digest, P617

[4] MONTE-CARLO PARTICLE SIMULATION OF A GAAS SHORT-CHANNEL MESFET [J].

AWANO, Y ;

TOMIZAWA, K ;

HASHIZUME, N ;

KAWASHIMA, M .

ELECTRONICS LETTERS, 1983, 19 (01) :20-21

[5] MONTE-CARLO PARTICLE SIMULATION OF GAAS SUB-MICRON N+-I-N+ DIODE [J].

AWANO, Y ;

TOMIZAWA, K ;

HASHIZUME, N ;

KAWASHIMA, M .

ELECTRONICS LETTERS, 1982, 18 (03) :133-135

[6]

AWANO Y, 1984, P INT S GAAS RELATED, P623

[7]

AWANO Y, 1984, IEEE T ELECTRON DEV, V1, P448

[8] MONTE-CARLO DETERMINATION OF ELECTRON TRANSPORT PROPERTIES IN GALLIUM ARSENIDE [J].

FAWCETT, W ;

BOARDMAN, AD ;

SWAIN, S .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1970, 31 (09) :1963-&

[9]

Hida H., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P759

[10]

HOCKNEY RW, IBM RC2870 RES REP

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