THE INVESTIGATION OF MIXED HALOGEN FREON OXYGEN TUNGSTEN REACTIVE ION ETCHING CHEMISTRIES WITH EXTENSION TO SILICON

被引：6

作者：

DAUBENSPECK, TH ^{[1
]}

WHITE, EJ ^{[1
]}

SUKANEK, PC ^{[1
]}

机构：

[1] CLARKSON UNIV,DEPT CHEM ENGN,POTSDAM,NY 13676

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 02期

关键词：

D O I：

10.1116/1.584710

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：167 / 174

页数：8

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[5]

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[7]

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[9]

HU CK, 1987, 172ND M EL SOC HON

[10]

MEHTA S, 1986, VLSI MULTILEVEL INTE

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