MOBILITY PARAMETERS AND METAL-OXIDE-SEMICONDUCTOR-TRANSISTOR PROPERTIES

[1] MODELLING OF SHORT-CHAMMEL MOS TRANSISTORS [J]. ELECTRONICS LETTERS, 1970, 6 (10) : 313 - +

[2] PHYSICAL LIMITATIONS OF MOS STRUCTURES [J]. SOLID-STATE ELECTRONICS, 1969, 12 (05) : 305 - +

[3] GAUCHEY DM, 1967, P IEEE, V8, P2192

[4] SURFACE TRANSPORT IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1960, 118 (04): : 967 - 975

[5] MARTINOT H, COL INT MICROELECTRO, V1, P128

[6] EFFECTS OF DIFFUSION CURRENT ON CHARACTERISTICS OF METAL-OXIDE (INSULATOR)-SEMICONDUCTOR TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1966, 9 (10) : 927 - +

[7] PIERRET RF, 1966, THESIS U ILLINOIS

[8] INFLUENCE ON CHARACTERISTICS OF MOS TRANSISTORS OF MOBILITY REDUCTION DUE TO A TRANSVERSE ELECTRIC FIELD [J]. ELECTRONICS LETTERS, 1969, 5 (23) : 604 - &

[9] EFFECTIVE CARRIER MOBILITY IN SURFACE-SPACE CHARGE LAYERS [J]. PHYSICAL REVIEW, 1955, 97 (03): : 641 - 646

[10] MEASUREMENT OF DRIFT VELOCITY OF ELECTRONS IN SILICON BY EXCITING A DIODE STRUCTURE WITH SHORT SUPERRADIANT LASER PULSES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (05) : 407 - +

[1] MODELLING OF SHORT-CHAMMEL MOS TRANSISTORS [J]. ELECTRONICS LETTERS, 1970, 6 (10) : 313 - +

[2] PHYSICAL LIMITATIONS OF MOS STRUCTURES [J]. SOLID-STATE ELECTRONICS, 1969, 12 (05) : 305 - +

[3] GAUCHEY DM, 1967, P IEEE, V8, P2192

[4] SURFACE TRANSPORT IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1960, 118 (04): : 967 - 975

[5] MARTINOT H, COL INT MICROELECTRO, V1, P128

[6] EFFECTS OF DIFFUSION CURRENT ON CHARACTERISTICS OF METAL-OXIDE (INSULATOR)-SEMICONDUCTOR TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1966, 9 (10) : 927 - +

[7] PIERRET RF, 1966, THESIS U ILLINOIS

[8] INFLUENCE ON CHARACTERISTICS OF MOS TRANSISTORS OF MOBILITY REDUCTION DUE TO A TRANSVERSE ELECTRIC FIELD [J]. ELECTRONICS LETTERS, 1969, 5 (23) : 604 - &

[9] EFFECTIVE CARRIER MOBILITY IN SURFACE-SPACE CHARGE LAYERS [J]. PHYSICAL REVIEW, 1955, 97 (03): : 641 - 646

[10] MEASUREMENT OF DRIFT VELOCITY OF ELECTRONS IN SILICON BY EXCITING A DIODE STRUCTURE WITH SHORT SUPERRADIANT LASER PULSES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (05) : 407 - +