RESONANT ENHANCEMENT OF RECOMBINATION PROBABILITY ASSOCIATED WITH ISOELECTRONIC TRAP STATES IN SEMICONDUCTOR ALLOYS IN1-XGAXP-N LASER OPERATION (77 DEGREES K) IN YELLOW-GREEN LAMBDA LESS-THAN-OR-EQUAL-TO 5560 A, H-OMEGA GREATER-THAN-OR-EQUAL-TO 2.23 EV

被引：22

作者：

DUKE, CB

SMITH, DL

KLEIMAN, GG

MACKSEY, HM

HOLONYAK, N

DUPUIS, RD

CAMPBELL, JC

机构：

[1] UNIV ILLINOIS,DEPT PHYS,MAT RES LAB,URBANA,IL 61801

[2] UNIV ILLINOIS,DEPT ELECT ENGN,MAT RES LAB,URBANA,IL 61801

[3] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

JOURNAL OF APPLIED PHYSICS | 1972年 / 43卷 / 12期

关键词：

D O I：

10.1063/1.1661085

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5134 / 5140

页数：7

共 21 条

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[10] IN1-XGAXP-N LASER OPERATION (CW,77DEGREES) ON NITROGEN A-LINE TRANSITION IN INDIRECT CRYSTALS (X GREATER THAN OR EQUAL TO 0.74) AND IN DIRECT CRYSTALS ABOVE FUNDAMENTAL BAND EDGE (X GREATER THAN OR EQUAL TO 3.71) [J].

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APPLIED PHYSICS LETTERS, 1972, 20 (01) :11-&

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