INDIUM DOPING OF (001), (111) AND (211) CDTE LAYERS GROWN BY MOLECULAR-BEAM EPITAXY

被引：8

作者：

TATARENKO, S ^{[1
]}

BASSANI, F ^{[1
]}

SAMINADAYAR, K ^{[1
]}

COX, RT ^{[1
]}

JOUNEAU, PH ^{[1
]}

MAGNEA, N ^{[1
]}

机构：

[1] CENG,DRFMC,SP2M,PHYS SEMICOND LAB,F-38041 GRENOBLE,FRANCE

来源：

JOURNAL OF CRYSTAL GROWTH | 1993年 / 127卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(93)90629-B

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Indium donor doping of (001), (111) and (211) oriented CdTe layers is performed by MBE (with a Cd overpressure in the case of (001) orientation). For (001) growth the role of the Cd overpressure on the growth characteristics and the doping properties is discussed. For tilted (111) orientation (misoriented a few degrees around the [110] axis) as well as for the (211) orientation, growth temperature as low as 240-degrees-C yields untwinned doped layers. Uniform dopings, in the 10(16)-10(18) cm-3 range, are reproducible with almost-equal-to 100% doping efficiency and the doped layers show PL spectra dominated by the D0X and DAP emissions.

引用

页码：318 / 322

页数：5

共 5 条

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APPLIED PHYSICS LETTERS, 1992, 60 (18) :2231-2233

[5]

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