GAS SOURCE IODINE NORMAL-TYPE DOPING OF MOLECULAR-BEAM EPITAXIALLY GROWN CDTE

被引:33
作者
RAJAVEL, D [1 ]
SUMMERS, CJ [1 ]
机构
[1] GEORGIA INST TECHNOL, PHYS SCI LAB, ATLANTA, GA 30332 USA
关键词
D O I
10.1063/1.107039
中图分类号
O59 [应用物理学];
学科分类号
摘要
Highly conductive n-type CdTe films were grown by molecular beam epitaxy by iodine doping, utilizing ethyliodide as the dopant precursor. The room-temperature electron concentration increased from 8 X 10(16) to 3 X 10(18) cm-3 for dopant flow rate from 10(-5) to 10(-2) sccm and the films exhibited very high electron mobilities. The structural and optical properties were determined by x-ray double crystal rocking curve and photoluminescence measurements. Secondary ion mass spectroscopic analysis indicated a high degree of electrical activity, and sharp dopant profiles. These results demonstrate that iodine is highly effective for the n-type doping of CdTe.
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页码:2231 / 2233
页数:3
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