ARSENIC-DOPED P-CDTE LAYERS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY

被引：40

作者：

GHANDHI, SK

TASKAR, NR

BHAT, IB

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 14期

关键词：

D O I：

10.1063/1.98027

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：900 / 902

页数：3

共 12 条

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[10] OMVPE GROWTH OF CDTE ON INSB SUBSTRATES [J].

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