MOVPE GROWTH AND CHARACTERISTICS OF CDTE ON INSB SUBSTRATES

被引：11

作者：

TASKAR, NR

BHAT, IB

GHANDHI, SK

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1986年 / 77卷 / 1-3期

关键词：

D O I：

10.1016/0022-0248(86)90340-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：480 / 484

页数：5

共 18 条

[1] GROWTH OF (100) CDTE-FILMS OF HIGH STRUCTURAL PERFECTION ON (100) GAAS SUBSTRATES BY MOLECULAR-BEAM EPITAXY [J].

BICKNELL, RN ;

YANKA, RW ;

GILES, NC ;

SCHETZINA, JF ;

MAGEE, TJ ;

LEUNG, C ;

KAWAYOSHI, H .

APPLIED PHYSICS LETTERS, 1984, 44 (03) :313-315

[2] RELATIVE MAGNITUDE OF DIFFUSION CONSTANTS OF CADMIUM VACANCIES AND INDIUM-CADMIUM VACANCY PAIRS IN CDS AND CDTE [J].

CHERN, SS ;

KROGER, FA .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1974, 25 (01) :215-222

[3]

FARROW RFC, 1981, APPL PHYS LETT, V39, P9544

[4] LUMINESCENCE CHARACTERIZATION OF RESIDUAL IMPURITIES IN CDTE GROWN BY MOLECULAR-BEAM EPITAXY [J].

FRANCOU, JM ;

SAMINADAYAR, K ;

PAUTRAT, JL ;

GAILLARD, JP ;

MILLION, A ;

FONTAINE, C .

JOURNAL OF CRYSTAL GROWTH, 1985, 72 (1-2) :220-225

[5] GROWTH OF CDTE ON INSB BY ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].

GHANDHI, SK ;

BHAT, I .

APPLIED PHYSICS LETTERS, 1984, 45 (06) :678-680

[6] PHOTOLUMINESCENCE OF CDTE - A COMPARISON OF BULK AND EPITAXIAL MATERIAL [J].

GILESTAYLOR, NC ;

BICKNELL, RN ;

BLANKS, DK ;

MYERS, TH ;

SCHETZINA, JF .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (01) :76-82

[7]

Hansen M., 1958, J ELECTROCHEM SOC, DOI DOI 10.1149/1.2428700

[8]

HOKE WE, 1984, APPL PHYS LETT, V45, P1307

[9] CDTE-FILMS ON (001) GAAS CR BY MOLECULAR-BEAM EPITAXY [J].

MAR, HA ;

CHEE, KT ;

SALANSKY, N .

APPLIED PHYSICS LETTERS, 1984, 44 (02) :237-239

[10] PHOTOLUMINESCENCE OF CDTE GROWN ON (001) INSB BY MOLECULAR-BEAM EPITAXY [J].

MAR, HA ;

SALANSKY, N .

JOURNAL OF APPLIED PHYSICS, 1984, 56 (08) :2369-2371

← 1 2 →