GROWTH OF CDTE ON INSB BY ORGANOMETALLIC VAPOR-PHASE EPITAXY

被引：28

作者：

GHANDHI, SK

BHAT, I

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 06期

关键词：

D O I：

10.1063/1.95354

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：678 / 680

页数：3

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[1] GROWTH OF (100) CDTE-FILMS OF HIGH STRUCTURAL PERFECTION ON (100) GAAS SUBSTRATES BY MOLECULAR-BEAM EPITAXY
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YANKA, RW
GILES, NC
SCHETZINA, JF
MAGEE, TJ
LEUNG, C
KAWAYOSHI, H
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (03) : 313 - 315
[2] HETEROEPITAXIAL GROWTH OF CDTE ON GAAS BY LASER ASSISTED DEPOSITION
CHEUNG, JT
KHOSHNEVISAN, M
MAGEE, T
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (05) : 462 - 464
[3] HIGH-QUALITY EPITAXIAL-FILMS OF CDTE ON SAPPHIRE
COLE, HS
WOODBURY, HH
SCHETZINA, JF
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (08) : 3166 - 3168
[4] MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGH STRUCTURAL PERFECTION, HETERO-EPITAXIAL CDTE-FILMS ON INSB (001)
FARROW, RFC
JONES, GR
WILLIAMS, GM
YOUNG, IM
[J]. APPLIED PHYSICS LETTERS, 1981, 39 (12) : 954 - 956
[5] FARROW RFC, 1984 US WORKSH PHYS, P5
[6] HIGH-QUALITY HG1-XCDXTE EPITAXIAL LAYERS BY THE ORGANOMETALLIC PROCESS
GHANDHI, SK
BHAT, I
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (08) : 779 - 781
[7] CDTE-FILMS ON (001) GAAS CR BY MOLECULAR-BEAM EPITAXY
MAR, HA
CHEE, KT
SALANSKY, N
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (02) : 237 - 239
[8] PROPERTIES OF CDTE/INSB HETEROSTRUCTURES PREPARED BY MOLECULAR-BEAM EPITAXY
MYERS, TH
LO, Y
SCHETZINA, JF
JOST, SR
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (12) : 9232 - 9234
[9] GROWTH OF CDTE-FILMS ON SAPPHIRE BY MOLECULAR-BEAM EPITAXY
MYERS, TH
LO, Y
BICKNELL, RN
SCHETZINA, JF
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (03) : 247 - 248
[10] MOLECULAR-BEAM EPITAXY OF CDTE AND HG1-XCDXTE ON GAAS (100)
NISHITANI, K
OHKATA, R
MUROTANI, T
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1983, 12 (03) : 619 - 635