MOLECULAR-BEAM EPITAXY OF CDTE AND HG1-XCDXTE ON GAAS (100)

被引：74

作者：

NISHITANI, K

OHKATA, R

MUROTANI, T

机构：

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1983年 / 12卷 / 03期

关键词：

D O I：

10.1007/BF02650868

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：619 / 635

页数：17

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