LIQUIDUS ISOTHERMS, SOLIDUS LINES AND LPE GROWTH IN THE TE-RICH CORNER OF THE HG-CD-TE SYSTEM

[1] BLAIR J, 1961, METALLURGY ELEMENTAL, V12, P393

[2] COMPARISON OF HG0.6CD0.4TE LPE LAYER GROWTH FROM TE-RICH, HG-RICH, AND HGTE-RICH SOLUTIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (01) : 24 - 28

[3] COHENSOLAL G, 1965, CR HEBD ACAD SCI, V261, P931

[4] COHENSOLAL G, 1974, JPN J APPL PHYS, P517

[5] FORMATION OF HG1-XCDXTE BY HG ION BOMBARDMENT OF CDTE SINGLE CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (13) : 6029 - &

[6] HANSEN M, 1958, CONSTITUTION BINARY, P840

[7] HARMAN TC, 1979, J ELECTRON MATER, V8, P191, DOI 10.1007/BF02663272

[8] VACUUM DEPOSITION OF HG0.8CD0.2TE [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (06) : 2487 - &

[9] HSIEH JJ, 1974, J CRYST GROWTH, V27, P49, DOI 10.1016/0022-0248(74)90418-7

[10] HULME KF, 1965, MATERIALS USED SEMIC, P117

[1] BLAIR J, 1961, METALLURGY ELEMENTAL, V12, P393

[2] COMPARISON OF HG0.6CD0.4TE LPE LAYER GROWTH FROM TE-RICH, HG-RICH, AND HGTE-RICH SOLUTIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (01) : 24 - 28

[3] COHENSOLAL G, 1965, CR HEBD ACAD SCI, V261, P931

[4] COHENSOLAL G, 1974, JPN J APPL PHYS, P517

[5] FORMATION OF HG1-XCDXTE BY HG ION BOMBARDMENT OF CDTE SINGLE CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (13) : 6029 - &

[6] HANSEN M, 1958, CONSTITUTION BINARY, P840

[7] HARMAN TC, 1979, J ELECTRON MATER, V8, P191, DOI 10.1007/BF02663272

[8] VACUUM DEPOSITION OF HG0.8CD0.2TE [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (06) : 2487 - &

[9] HSIEH JJ, 1974, J CRYST GROWTH, V27, P49, DOI 10.1016/0022-0248(74)90418-7

[10] HULME KF, 1965, MATERIALS USED SEMIC, P117