VACUUM DEPOSITION OF HG0.8CD0.2TE

被引:23
作者
HOHNKE, DK
HOLLOWAY, H
LOGOTHET.EM
CRAWLEY, RC
机构
关键词
D O I
10.1063/1.1660567
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:2487 / &
相关论文
共 29 条
[1]   PREPARATION AND TRANSPORT PROPERTIES OF EPITAXIAL HGTE FILMS [J].
ANTCLIFFE, GA ;
KRAUS, H .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1969, 30 (02) :243-+
[2]   GAAS, GAP, AND GAASXP1-X EPITAXIAL FILMS GROWN BY MOLECULAR BEAM DEPOSITION [J].
ARTHUR, JR ;
LEPORE, JJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1969, 6 (04) :545-&
[3]   GROWTH AND PROPERTIES OF CDXHG1-XTE CRYSTALS [J].
BARTLETT, BE ;
DEANS, J ;
ELLEN, PC .
JOURNAL OF MATERIALS SCIENCE, 1969, 4 (03) :266-&
[4]   PARTIAL PRESSURES OF HG(G) AND TE2(G) IN HG-TE SYSTEM FROM OPTICAL DENSITIES [J].
BREBRICK, RF ;
STRAUSS, AJ .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1965, 26 (06) :989-&
[5]  
COHENSOLAL G, 1965, CR HEBD ACAD SCI, V260, P4190
[6]   FUNDAMENTAL REFLECTIVITY SPECTRUM OF CDXHG1-XTE CRYSTALS FROM 1.5-EV TO 4-EV [J].
GALAZKA, RR ;
KISIEL, A .
PHYSICA STATUS SOLIDI, 1969, 34 (01) :63-&
[7]   MASS SPECTROMETRIC AND KNUDSEN-CELL VAPORIZATION STUDIES OF GROUP 2B-6B COMPOUNDS [J].
GOLDFINGER, P ;
JEUNEHOMME, M .
TRANSACTIONS OF THE FARADAY SOCIETY, 1963, 59 (492) :2851-&
[8]  
GUNTHER KG, 1962, COMPOUND SEMICONDUCT, V1, pCH35
[9]   ORIENTED GROWTH OF SEMICONDUCTORS .4. VACUUM DEPOSITION OF EPITAXIAL INDIUM ANTIMONIDE [J].
HOLLOWAY, H ;
RICHARDS, JL ;
BOBB, LC ;
PERRY, J ;
ZIMMERMAN, E .
JOURNAL OF APPLIED PHYSICS, 1966, 37 (13) :4694-&
[10]   EPITAXIAL GROWTH OF LEAD TIN TELLURIDE [J].
HOLLOWAY, H ;
LOGOTHETIS, EM ;
WILKES, E .
JOURNAL OF APPLIED PHYSICS, 1970, 41 (08) :3543-+