PROPERTIES OF CDTE/INSB HETEROSTRUCTURES PREPARED BY MOLECULAR-BEAM EPITAXY

被引：30

作者：

MYERS, TH ^{[1
]}

LO, Y ^{[1
]}

SCHETZINA, JF ^{[1
]}

JOST, SR ^{[1
]}

机构：

[1] GE,ELECTR LAB,SYRACUSE,NY 13221

来源：

关键词：

D O I：

10.1063/1.330400

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：9232 / 9234

页数：3

共 9 条

[1] PARTIAL PRESSURES + GIBBS FREE ENERGY OF FORMATION FOR CONGRUENTLY SUBLIMING CDTE(C)
BREBRICK, RF
STRAUSS, AJ
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (12) : 1441 - &
[2] CASTAGNE R, 1971, SURF SCI, V28, P557
[3] DISTRIBUTION OF FLAT-BAND VOLTAGES IN LATERALLY NONUNIFORM MIS CAPACITORS AND APPLICATION TO A TEST FOR NONUNIFORMITIES
CHANG, CC
JOHNSON, WC
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (12) : 1368 - 1373
[4] MASS SPECTROMETRIC AND KNUDSEN-CELL VAPORIZATION STUDIES OF GROUP 2B-6B COMPOUNDS
GOLDFINGER, P
JEUNEHOMME, M
[J]. TRANSACTIONS OF THE FARADAY SOCIETY, 1963, 59 (492): : 2851 - &
[5] INTERFACE PROPERTIES OF INSB MIS STRUCTURES
KIM, JC
[J]. IEEE TRANSACTIONS ON PARTS HYBRIDS AND PACKAGING, 1974, PH10 (04): : 200 - 207
[6] CHARACTERIZATION OF IMPROVED INSB INTERFACES
LANGAN, JD
VISWANATHAN, CR
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1474 - 1477
[7] OPTICAL-PROPERTIES OF POLYCRYSTALLINE CDTE-FILMS
MYERS, TH
EDWARDS, SW
SCHETZINA, JF
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) : 4231 - 4237
[8] WEI CY, 1980, IEEE T ELECTRON DEV, V27, P170
[9] ZERBST M, 1966, Z ANGEW PHYSIK, V22, P30