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DISTRIBUTION OF FLAT-BAND VOLTAGES IN LATERALLY NONUNIFORM MIS CAPACITORS AND APPLICATION TO A TEST FOR NONUNIFORMITIES
被引:10
作者
:
CHANG, CC
论文数:
0
引用数:
0
h-index:
0
机构:
PRINCETON UNIV, DEPT ELECT ENGN & COMP SCI, PRINCETON, NJ 08540 USA
PRINCETON UNIV, DEPT ELECT ENGN & COMP SCI, PRINCETON, NJ 08540 USA
CHANG, CC
[
1
]
JOHNSON, WC
论文数:
0
引用数:
0
h-index:
0
机构:
PRINCETON UNIV, DEPT ELECT ENGN & COMP SCI, PRINCETON, NJ 08540 USA
PRINCETON UNIV, DEPT ELECT ENGN & COMP SCI, PRINCETON, NJ 08540 USA
JOHNSON, WC
[
1
]
机构
:
[1]
PRINCETON UNIV, DEPT ELECT ENGN & COMP SCI, PRINCETON, NJ 08540 USA
来源
:
IEEE TRANSACTIONS ON ELECTRON DEVICES
|
1978年
/ 25卷
/ 12期
关键词
:
D O I
:
10.1109/T-ED.1978.19357
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:1368 / 1373
页数:6
相关论文
共 13 条
[1]
SURFACE STATES AT STEAM-GROWN SILICON-SILICON DIOXIDE INTERFACES
BERGLUND, CN
论文数:
0
引用数:
0
h-index:
0
BERGLUND, CN
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1966,
ED13
(10)
: 701
-
+
[2]
ADMITTANCE OF AN MOS DEVICE WITH INTERFACE CHARGE INHOMOGENEITIES
BREWS, JR
论文数:
0
引用数:
0
h-index:
0
BREWS, JR
[J].
JOURNAL OF APPLIED PHYSICS,
1972,
43
(08)
: 3451
-
&
[3]
TEST FOR LATERAL NONUNIFORMITIES IN MOS DEVICES USING ONLY CAPACITANCE CURVES
BREWS, JR
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TELE LABS,MURRAY HILL,NJ 07974
BELL TELE LABS,MURRAY HILL,NJ 07974
BREWS, JR
LOPEZ, AD
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TELE LABS,MURRAY HILL,NJ 07974
BELL TELE LABS,MURRAY HILL,NJ 07974
LOPEZ, AD
[J].
SOLID-STATE ELECTRONICS,
1973,
16
(11)
: 1267
-
1277
[4]
CASTAGNE R, 1968, CR ACAD SCI B PHYS, V267, P866
[5]
APPARENT INTERFACE STATE DENSITY INTRODUCED BY SPATIAL FLUCTUATIONS OF SURFACE POTENTIAL IN AN MOS STRUCTURE
CASTAGNE, R
论文数:
0
引用数:
0
h-index:
0
CASTAGNE, R
VAPAILLE, A
论文数:
0
引用数:
0
h-index:
0
VAPAILLE, A
[J].
ELECTRONICS LETTERS,
1970,
6
(22)
: 691
-
+
[6]
DESCRIPTION OF SIO2-SI INTERFACE PROPERTIES BY MEANS OF VERY LOW FREQUENCY MOS CAPACITANCE MEASUREMENTS
CASTAGNE, R
论文数:
0
引用数:
0
h-index:
0
CASTAGNE, R
VAPAILLE, A
论文数:
0
引用数:
0
h-index:
0
VAPAILLE, A
[J].
SURFACE SCIENCE,
1971,
28
(01)
: 157
-
+
[7]
FREQUENCY AND TEMPERATURE TESTS FOR LATERAL NONUNIFORMITIES IN MIS CAPACITORS
CHANG, CC
论文数:
0
引用数:
0
h-index:
0
机构:
IND TECH RES INST, HSINCHU, TAIWAN
CHANG, CC
JOHNSON, WC
论文数:
0
引用数:
0
h-index:
0
机构:
IND TECH RES INST, HSINCHU, TAIWAN
JOHNSON, WC
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1977,
24
(10)
: 1249
-
1255
[8]
BARRIER INHOMOGENEITIES ON A SI-SIO2 INTERFACE BY SCANNING INTERNAL PHOTOEMISSION
DISTEFAN.TH
论文数:
0
引用数:
0
h-index:
0
DISTEFAN.TH
[J].
APPLIED PHYSICS LETTERS,
1971,
19
(08)
: 280
-
&
[9]
Grove A S, 1967, PHYS TECHNOLOGY SEMI
[10]
A QUASI-STATIC TECHNIQUE FOR MOS C-V AND SURFACE STATE MEASUREMENTS
KUHN, M
论文数:
0
引用数:
0
h-index:
0
KUHN, M
[J].
SOLID-STATE ELECTRONICS,
1970,
13
(06)
: 873
-
+
←
1
2
→
共 13 条
[1]
SURFACE STATES AT STEAM-GROWN SILICON-SILICON DIOXIDE INTERFACES
BERGLUND, CN
论文数:
0
引用数:
0
h-index:
0
BERGLUND, CN
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1966,
ED13
(10)
: 701
-
+
[2]
ADMITTANCE OF AN MOS DEVICE WITH INTERFACE CHARGE INHOMOGENEITIES
BREWS, JR
论文数:
0
引用数:
0
h-index:
0
BREWS, JR
[J].
JOURNAL OF APPLIED PHYSICS,
1972,
43
(08)
: 3451
-
&
[3]
TEST FOR LATERAL NONUNIFORMITIES IN MOS DEVICES USING ONLY CAPACITANCE CURVES
BREWS, JR
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TELE LABS,MURRAY HILL,NJ 07974
BELL TELE LABS,MURRAY HILL,NJ 07974
BREWS, JR
LOPEZ, AD
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TELE LABS,MURRAY HILL,NJ 07974
BELL TELE LABS,MURRAY HILL,NJ 07974
LOPEZ, AD
[J].
SOLID-STATE ELECTRONICS,
1973,
16
(11)
: 1267
-
1277
[4]
CASTAGNE R, 1968, CR ACAD SCI B PHYS, V267, P866
[5]
APPARENT INTERFACE STATE DENSITY INTRODUCED BY SPATIAL FLUCTUATIONS OF SURFACE POTENTIAL IN AN MOS STRUCTURE
CASTAGNE, R
论文数:
0
引用数:
0
h-index:
0
CASTAGNE, R
VAPAILLE, A
论文数:
0
引用数:
0
h-index:
0
VAPAILLE, A
[J].
ELECTRONICS LETTERS,
1970,
6
(22)
: 691
-
+
[6]
DESCRIPTION OF SIO2-SI INTERFACE PROPERTIES BY MEANS OF VERY LOW FREQUENCY MOS CAPACITANCE MEASUREMENTS
CASTAGNE, R
论文数:
0
引用数:
0
h-index:
0
CASTAGNE, R
VAPAILLE, A
论文数:
0
引用数:
0
h-index:
0
VAPAILLE, A
[J].
SURFACE SCIENCE,
1971,
28
(01)
: 157
-
+
[7]
FREQUENCY AND TEMPERATURE TESTS FOR LATERAL NONUNIFORMITIES IN MIS CAPACITORS
CHANG, CC
论文数:
0
引用数:
0
h-index:
0
机构:
IND TECH RES INST, HSINCHU, TAIWAN
CHANG, CC
JOHNSON, WC
论文数:
0
引用数:
0
h-index:
0
机构:
IND TECH RES INST, HSINCHU, TAIWAN
JOHNSON, WC
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1977,
24
(10)
: 1249
-
1255
[8]
BARRIER INHOMOGENEITIES ON A SI-SIO2 INTERFACE BY SCANNING INTERNAL PHOTOEMISSION
DISTEFAN.TH
论文数:
0
引用数:
0
h-index:
0
DISTEFAN.TH
[J].
APPLIED PHYSICS LETTERS,
1971,
19
(08)
: 280
-
&
[9]
Grove A S, 1967, PHYS TECHNOLOGY SEMI
[10]
A QUASI-STATIC TECHNIQUE FOR MOS C-V AND SURFACE STATE MEASUREMENTS
KUHN, M
论文数:
0
引用数:
0
h-index:
0
KUHN, M
[J].
SOLID-STATE ELECTRONICS,
1970,
13
(06)
: 873
-
+
←
1
2
→