OMVPE GROWTH OF CDTE ON INSB SUBSTRATES

被引：10

作者：

TASKAR, NR

BHAT, IB

BORREGO, JM

GHANDHI, SK

机构：

[1] Rensselaer Polytechnic Inst, Troy,, NY, USA, Rensselaer Polytechnic Inst, Troy, NY, USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1986年 / 15卷 / 03期

关键词：

D O I：

10.1007/BF02655331

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：165 / 168

页数：4

共 15 条

[1]

BHAT I, 1984, J ELECTROCHEM SOC, V131, P8

[2] GROWTH OF (100) CDTE-FILMS OF HIGH STRUCTURAL PERFECTION ON (100) GAAS SUBSTRATES BY MOLECULAR-BEAM EPITAXY [J].

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KAWAYOSHI, H .

APPLIED PHYSICS LETTERS, 1984, 44 (03) :313-315

[3] RELATIVE MAGNITUDE OF DIFFUSION CONSTANTS OF CADMIUM VACANCIES AND INDIUM-CADMIUM VACANCY PAIRS IN CDS AND CDTE [J].

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KROGER, FA .

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[4] HETEROEPITAXIAL GROWTH OF CDTE ON GAAS BY LASER ASSISTED DEPOSITION [J].

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KHOSHNEVISAN, M ;

MAGEE, T .

APPLIED PHYSICS LETTERS, 1983, 43 (05) :462-464

[5] MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGH STRUCTURAL PERFECTION, HETERO-EPITAXIAL CDTE-FILMS ON INSB (001) [J].

FARROW, RFC ;

JONES, GR ;

WILLIAMS, GM ;

YOUNG, IM .

APPLIED PHYSICS LETTERS, 1981, 39 (12) :954-956

[6]

FARROW RFC, 1984 US WORKSH PHYS, P5

[7] HIGH-QUALITY HG1-XCDXTE EPITAXIAL LAYERS BY THE ORGANOMETALLIC PROCESS [J].

GHANDHI, SK ;

BHAT, I .

APPLIED PHYSICS LETTERS, 1984, 44 (08) :779-781

[8] GROWTH OF CDTE ON INSB BY ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].

GHANDHI, SK ;

BHAT, I .

APPLIED PHYSICS LETTERS, 1984, 45 (06) :678-680

[9] CDTE-FILMS ON (001) GAAS CR BY MOLECULAR-BEAM EPITAXY [J].

MAR, HA ;

CHEE, KT ;

SALANSKY, N .

APPLIED PHYSICS LETTERS, 1984, 44 (02) :237-239

[10] PROPERTIES OF CDTE/INSB HETEROSTRUCTURES PREPARED BY MOLECULAR-BEAM EPITAXY [J].

MYERS, TH ;

LO, Y ;

SCHETZINA, JF ;

JOST, SR .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (12) :9232-9234

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