ELECTRON-STATES ASSOCIATED WITH CORE REGION OF 60-DEGREES-DISLOCATION IN SILICON AND GERMANIUM

被引：56

作者：

MARKLUND, S

机构：

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1978年 / 85卷 / 02期

关键词：

D O I：

10.1002/pssb.2220850232

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：673 / 681

页数：9

共 23 条

[1] ELECTRON-STATES ASSOCIATED WITH CORE REGION OF 60DEGREES DISLOCATION IN SILICON
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[3] BARTH W, 1970, PHYS STATUS SOLIDI, V38, pK141
[4] POLARIZATION OF INFRARED ABSORPTION OF DISOLOCATIONS IN GERMANIUM
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[5] Radiative Recombination in Germanium with High Dislocation Densities
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[6] ELECTRONIC STATES OF DISLOCATIONS IN GERMANIUM
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[7] ELECTRONIC STATES ASSOCIATED WITH 60DEGREES EDGE DISLOCATION IN SILICON
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[8] ELECTRONIC STATES ASSOCIATED WITH 60-DEGREE EDGE DISLOCATION IN GERMANIUM
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[J]. PHILOSOPHICAL MAGAZINE, 1977, 36 (03): : 677 - 683
[9] EDGE DISLOCATION BEHAVIOR IN AU-N-SILICON DIODES
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PENNINO, UD
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 30 (02): : 747 - 754
[10] CAPACITANCE MEASUREMENTS AS A NEW TOOL TO INVESTIGATE ELECTRONIC STATES OF DISLOCATIONS IN SEMICONDUCTORS
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[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1976, 35 (02): : 451 - 457

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