EFFECT OF CRYSTALLOGRAPHIC ORIENTATION ON THE POLYTYPE STABILIZATION AND TRANSFORMATION OF SILICON-CARBIDE

被引：45

作者：

VODAKOV, YA

MOKHOV, EN

ROENKOV, AD

SAIDBEKOV, DT

机构：

[1] A. F. Ioffe Physico-Technical Institute, Academy of Sciences of the Ussr

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1979年 / 51卷 / 01期

关键词：

D O I：

10.1002/pssa.2210510123

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effect of the substrate crystallographic orientation on the polytypism of SiC epitaxial layers grown by different methods in the temperature range 1600 to 2400 °C is investigated. It is established that the polytype stability is higher in the [0001] Si growth direction. External growth conditions, for example the presence of impurities, play a more important part in the polytype transformation at the growth in [0001] C direction. The crystallographic orientation effect on the polytypism is explained by the specificity of chemical bonds of silicon and carbon surface atoms. Copyright © 1979 WILEY‐VCH Verlag GmbH & Co. KGaA

引用

页码：209 / 215

页数：7

共 28 条

[1]

Aleksandrov L. N., 1976, Kristall und Technik, V11, P591, DOI 10.1002/crat.19760110603

[2]

BAKOVETS VV, 1977, KRISTALLOGRAFIYA+, V22, P217

[3]

BAKOVETS VV, 1976, IAN SSSR NEORG MATER, V12, P1686

[4] PHASE TRANSFORMATIONS, HABIT CHANGES AND CRYSTAL GROWTH IN SIC [J].