EFFECT OF CRYSTALLOGRAPHIC ORIENTATION ON THE POLYTYPE STABILIZATION AND TRANSFORMATION OF SILICON-CARBIDE

被引:45
作者
VODAKOV, YA
MOKHOV, EN
ROENKOV, AD
SAIDBEKOV, DT
机构
[1] A. F. Ioffe Physico-Technical Institute, Academy of Sciences of the Ussr
来源
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1979年 / 51卷 / 01期
关键词
D O I
10.1002/pssa.2210510123
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The effect of the substrate crystallographic orientation on the polytypism of SiC epitaxial layers grown by different methods in the temperature range 1600 to 2400 °C is investigated. It is established that the polytype stability is higher in the [0001] Si growth direction. External growth conditions, for example the presence of impurities, play a more important part in the polytype transformation at the growth in [0001] C direction. The crystallographic orientation effect on the polytypism is explained by the specificity of chemical bonds of silicon and carbon surface atoms. Copyright © 1979 WILEY‐VCH Verlag GmbH & Co. KGaA
引用
收藏
页码:209 / 215
页数:7
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