PREPARATION OF EPITAXIAL SILICON-CARBIDE LAYERS DOPED WITH GROUP-3 AND GROUP-5 ELEMENTS ON ALPHA-SIC CRYSTALS

被引：5

作者：

SWIDERSKI, I ^{[1
]}

机构：

[1] RES CTR CRYSTALS,ZIELNA 37,WARSAW,POLAND

来源：

JOURNAL OF CRYSTAL GROWTH | 1976年 / 32卷 / 03期

关键词：

D O I：

10.1016/0022-0248(76)90116-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：350 / 356

页数：7

共 9 条

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[5] PREPARATION OF PURE AND BORON-DOPED EPITAXIAL ALPHA-SIC LAYERS ON SILICON-CARBIDE CRYSTALS [J].

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[6]

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[7] GROWTH OF SILICON-CARBIDE CRYSTALS BY VAPOR-LIQUID-SOLID (VLS) MECHANISM IN SUBLIMATION METHOD [J].

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[8] LANTHANUM-STIMULATED HIGH-TEMPERATURE WHISKER GROWTH OF ALPHA-SIC [J].

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JOURNAL OF CRYSTAL GROWTH, 1972, 12 (02) :97-+

[9] EPITAXIAL GROWTH OF SIC USING AL AS AN ACCELERATOR [J].

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