CREATION OF P-N-JUNCTION IN HG0.3CD0.7TE

被引：20

作者：

BARBOT, JF ^{[1
]}

KRONEWITZ, J ^{[1
]}

SCHROTER, W ^{[1
]}

机构：

[1] SONDERFORSCH BEREICH 345,W-3400 GOTTINGEN,GERMANY

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 25期

关键词：

D O I：

10.1063/1.103801

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have used local plastic deformation and electron irradiation to create p-n junctions in Hg0.3Cd0.7Te. The electron induced current mode of scanning electron microscopy was used to detect the local conversion from p type to n type. Control experiments with CdTe and independent results show that the migration of interstitial mercury and its reaction with an acceptor must be responsible for the observed conversion.

引用

页码：2689 / 2691

页数：3

共 4 条

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NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1990, 47 (01) :15-21

[4]

ZOTH G, UNPUB

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