ION-BEAM MILLING EFFECT ON ELECTRICAL-PROPERTIES OF HG1-XCDXTE

[1] NEAR-AMBIENT-TEMPERATURE BIPOLAR-TRANSISTOR IN CADMIUM MERCURY TELLURIDE [J]. ELECTRONICS LETTERS, 1987, 23 (24) : 1280 - 1281

[2] BIPOLAR-TRANSISTOR ACTION IN CADMIUM MERCURY TELLURIDE [J]. ELECTRONICS LETTERS, 1986, 22 (11) : 611 - 613

[3] DAMAGE AND LATTICE LOCATION STUDIES IN HG IMPLANTED HG1-XCDXTE [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 48 (1-4): : 247 - 252

[4] BAHIR G, 1983, J APPL PHYS, V56, P3129

[5] BAKER IM, 1983, IEE C PUBL, V228

[6] TYPE CONVERSION IN CDXHG1-XTE BY ION-BEAM TREATMENT [J]. ELECTRONICS LETTERS, 1987, 23 (19) : 978 - 979

[7] DEFECTS, DIFFUSION AND ACTIVATION IN ION-IMPLANTED HGCDTE [J]. JOURNAL OF CRYSTAL GROWTH, 1988, 86 (1-4) : 723 - 734

[8] CREY GP, 1985, J VAC SCI TECHNOL A, V3, P255

[9] DESTEFANIS GL, 1988, J CRYST GROWTH, V83, P700

[10] ELLIOT CT, 1970, SOLID STATE COMMUN, V8, P803

[1] NEAR-AMBIENT-TEMPERATURE BIPOLAR-TRANSISTOR IN CADMIUM MERCURY TELLURIDE [J]. ELECTRONICS LETTERS, 1987, 23 (24) : 1280 - 1281

[2] BIPOLAR-TRANSISTOR ACTION IN CADMIUM MERCURY TELLURIDE [J]. ELECTRONICS LETTERS, 1986, 22 (11) : 611 - 613

[3] DAMAGE AND LATTICE LOCATION STUDIES IN HG IMPLANTED HG1-XCDXTE [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 48 (1-4): : 247 - 252

[4] BAHIR G, 1983, J APPL PHYS, V56, P3129

[5] BAKER IM, 1983, IEE C PUBL, V228

[6] TYPE CONVERSION IN CDXHG1-XTE BY ION-BEAM TREATMENT [J]. ELECTRONICS LETTERS, 1987, 23 (19) : 978 - 979

[7] DEFECTS, DIFFUSION AND ACTIVATION IN ION-IMPLANTED HGCDTE [J]. JOURNAL OF CRYSTAL GROWTH, 1988, 86 (1-4) : 723 - 734

[8] CREY GP, 1985, J VAC SCI TECHNOL A, V3, P255

[9] DESTEFANIS GL, 1988, J CRYST GROWTH, V83, P700

[10] ELLIOT CT, 1970, SOLID STATE COMMUN, V8, P803