DEFECTS, DIFFUSION AND ACTIVATION IN ION-IMPLANTED HGCDTE

The current understanding in junction formation by ion implantation in HgCdTe material is discussed. Two major techniques are available for junction formation: a traditional technique that consists of an ion implantation process (usually B or Be) followed by a diffusion of the irradiation-displaced mercury atoms (I**2/DMD), and a classical technique of ion implantation followed by the electrical activation of the implanted species. The activation process could be of a diffused species from the implanted source, or of the as-implanted species (I**2/AD or I**2/D, respectively). A variety of junctions different in nature and electrical profile have been demonstrated. The best quality devices obtained so far in Hg//1// minus //xCd//xTe material with x equals 0. 2 from either technique are implanted-diffused in nature.