DEFECTS, DIFFUSION AND ACTIVATION IN ION-IMPLANTED HGCDTE

被引:115
作者
BUBULAC, LO
机构
[1] Rockwell Int Science Cent, Thousand, Oaks, CA, USA, Rockwell Int Science Cent, Thousand Oaks, CA, USA
关键词
CRYSTALS - Defects - MERCURY COMPOUNDS - Diffusion - SEMICONDUCTOR DEVICES - Junctions;
D O I
10.1016/0022-0248(90)90799-Q
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
The current understanding in junction formation by ion implantation in HgCdTe material is discussed. Two major techniques are available for junction formation: a traditional technique that consists of an ion implantation process (usually B or Be) followed by a diffusion of the irradiation-displaced mercury atoms (I**2/DMD), and a classical technique of ion implantation followed by the electrical activation of the implanted species. The activation process could be of a diffused species from the implanted source, or of the as-implanted species (I**2/AD or I**2/D, respectively). A variety of junctions different in nature and electrical profile have been demonstrated. The best quality devices obtained so far in Hg//1// minus //xCd//xTe material with x equals 0. 2 from either technique are implanted-diffused in nature.
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页码:723 / 734
页数:12
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