FORMATION OF P-PHOTODIODES ON N-PHOTODIODES IN HG1-XCDXTE BY ION-IMPLANTATION AND CW CO2-LASER ANNEALING

被引：14

作者：

KALISH, R

BAHIR, G

机构：

[1] TECHNION ISRAEL INST TECHNOL,INST SOLID STATE,IL-32000 HAIFA,ISRAEL

[2] TECHNION ISRAEL INST TECHNOL,DEPT ELECT ENGN,MICROELECTR RES CTR,IL-32000 HAIFA,ISRAEL

来源：

JOURNAL OF CRYSTAL GROWTH | 1985年 / 72卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(85)90193-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：474 / 477

页数：4

相关论文

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