CW CO2 AND RUBY-LASER ANNEALING OF ION-IMPLANTED HG1-XCDXTE

被引：34

作者：

BAHIR, G ^{[1
]}

KALISH, R ^{[1
]}

机构：

[1] TECHNION ISRAEL INST TECHNOL,DEPT PHYS,HAIFA,ISRAEL

来源：

关键词：

D O I：

10.1063/1.92864

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：730 / 732

页数：3

共 9 条

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[2] DAMAGE AND LATTICE LOCATION STUDIES IN HG IMPLANTED HG1-XCDXTE
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[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 48 (1-4): : 247 - 252
[3] BAHIR G, UNPUBLISHED
[4] Dornhaus R., 1976, SPRINGER TRACTS MODE, V78, P1
[5] ELECTRICAL-PROPERTIES OF ION-IMPLANTED LAYERS IN HG0.79CD0.21TE
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[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (10) : 6386 - 6389
[6] DECHANNELING BY DISLOCATIONS IN ION-IMPLANTED AL
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[J]. PHYSICAL REVIEW B, 1978, 18 (05): : 2078 - 2096
[7] REINE MB, 1980, SEMICONDUCTORS SEMIM, V18
[8] ION-IMPLANTATION DOPING OF CD0.2HG0.8TE FOR INFRARED DETECTORS
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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (01) : 58 - 62
[9] HG-CD-TE PHASE-DIAGRAM DETERMINATION BY HIGH-PRESSURE REFLUX
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[J]. JOURNAL OF ELECTRONIC MATERIALS, 1976, 5 (03) : 299 - 320